Mosfet 2n7000



Description

The 2N7000 is a N-Channel Enhancement Mode Field Effect Transistor, a.k.a. MOSFET for voltage controlled small signal switching.

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2N7000 N Channel Enhancement Mode MOSFET Switch Circuit Basics

Catalog

2N7000 Pinout

Pin Number

Pin Name

Description

1

Source

Current flows out through Source

2

Gate Forklift price.

Controls the biasing of the MOSFET

3

Drain

Current flows in through Drain

Mosfet 2n7000

2N7000 Parameters

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID)

200mA

Drain Current-Max (ID)

0.2 A

Drain to Source Resistance

5R

Drain to Source Voltage (Vdss)

60V

Drain-source On Resistance-Max

5 Ω

DS Breakdown Voltage-Min

60 V

Element Configuration

Single

Feedback Cap-Max (Crss)

5 pF

FET Technology

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs)

30V

Height

5.33mm

JEDEC-95 Code

TO-92

JESD-30 Code

O-PBCY-T3

Lead Free

Lead Free

Length

5.21mm

Manufacturer

Microchip Technology Inc

Manufacturer Part Number

2N7000-GP003

Max Power Dissipation

1W

Number of Channels

1

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package

TO-92-3

Part Life Cycle Code

Active

Polarity/Channel Type

N-CHANNEL

Reach Compliance Code

Compliant

REACH SVHC

No SVHC

Risk Rank

5.56

Surface Mount

NO

Terminal Form

THROUGH-HOLE

Terminal Position

BOTTOM

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Voltage Rating (DC)

60V

Weight

0.00776oz

Width

4.19mm

2N7000 Features

  • Free from secondary breakdown
  • Low power drive requirement
  • Ease of paralleling
  • Low CISS and fast switching speeds
  • Excellent thermal stability
  • Integral source-drain diode
  • High input impedance and high gain

2N7000 Applications

  • Motor controls
  • Converters
  • Amplifiers
  • Switches
  • Power supply circuits
  • Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

The 2N7000 has been referred to as a 'FETlington' and as an 'absolutely ideal hacker part.' The word 'FETlington' is a reference to the Darlington-transistor-like saturation characteristic.

A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:

  • high input impedance of the insulated gate means almost no gate current is required
  • consequently no current-limiting resistor is required in the gate input

MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit

The main disadvantages of these FETs over bipolar transistors in switching are the following:

  • susceptibility to cumulative damage from static discharge prior to installation
  • circuits with external gate exposure require a protection gate resistor or other static discharge protection
  • Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor

2N7000 Advantage

The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

2N7000 Switching Waveforms and Test Circuit

2N7000 Package Information

  • 3-Lead TO-92 Package Outline (N3) Front View

Mosfet 2n7000 Pinout

  • 3-Lead TO-92 Package Outline (N3) Side View
  • 3-Lead TO-92 Package Outline (N3) Bottom View

2N7000 Popularity by Region

2N7000 Alternatives

Manufacturer

Manufacturer Part No.

Lifecycle Status Indicator

Microchip Supertex

2N7000-G

Volume Production

How to use 2N7000

A Mosfet has three terminals: Drain, Source and Gate. The current always enters through the Drain and leaves through the Source. The Gate pin acts as a switch to turn the Mosfet on or off. If the Gate is connected to ground, the Mosfet is switched off, i.e. there is no connection between the Drain and the Source (open). If the Gate is supplied with its source voltage (VGS) then the MOSFET will be ON, i.e. the Drain and Source pins will be connected together (Closed). Thus, by controlling the voltage (VGS), we can switch the MOSFET, making the MOSFET a voltage-controlled device.

2n7000a Mosfet Datasheet

The gate-source voltage (VGS) is a critical parameter when using the transistor. For this transistor, the VGS is 20V, so when we supply this voltage, the MOSFET will be completely closed. Any value between 20V causes the MOSFET to partially close, creating a partial connection. The load switched by the MOSFET can reach 60V (VDS) and can consume up to 200mA (ID).

Given bellow is a very simple circuit underneath that uses this MOSFET to control a 24V 2A load motor. The current and voltage values can also be observed when the switch is closed and open.

As we know that the voltage of the grid source of this Mosfet is 20V, we used 20V to turn on the MOSFET. When the gate switch is open, the Mosfet's gate pin must be connected to ground to cut the load, so we used a 10K resistor to turn off the MOSFET after turning it on. The RG resistor is a current limiting resistor that limits the required grid current. If the load controlled by the MOSFET is an inductive load like the motor we have used here, then it is mandatory to use a flywheel diode to safely discharge the load accumulated by the inductive coil.

2n7000

Where to use 2N7000

2N7000 is a small N-channel MOSFET. MOSFETs are electronic power switches, just like transistors, but with a higher current and voltage rating. The 2N7000 MOSFET can be used to switch loads that operate on less than 60V (VDS) and 200mA (ID). This mosfet comes in a compact TO-92 package and has a threshold voltage of 3V, so if you are looking for a small mosfet to switch a load, this IC might be right for you.

2n7000 Mosfet Ltspice

Product Manufacturer

Microchip Technology Inc. is a leading provider of microcontroller and analog semiconductors, providing low-risk product development, lower total system cost and faster time to market for thousands of diverse customer applications worldwide. Headquartered in Chandler, Arizona, Microchip offers outstanding technical support along with dependable delivery and quality.

FAQ

Mosfet 2n7000 Datasheet

  • What is a 2n7000 Mosfet?

2N7000 is a small signal N-channel MOSFET. MOSFET's are power electronic switches just like transistors, but with a higher current and voltage rating. The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID).

  • What is a maximum operating voltage for the 2n7002 transistor?

The 2N7002 is a logic level MOSFET with a low on-state resistance. The mosfet has a low gate to source threshold voltage of 2.1V typically this makes the mosfet suitable even for 3.3V application circuits.

  • What is Mosfet gate threshold voltage?

The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source voltage is the maximum gate-source voltage that the MOSFET can withstand safely.

  • What is an channel Mosfet?

The N-Channel MOSFET has an N- channel region located in between the source and drain terminals. It is a four-terminal device having the terminals as gate, drain, source, body. In this type of Field Effect Transistor, the drain and source are heavily doped n+ region and the substrate or body are of P-type.

2n7000 Mosfet Ltspice Model

PhotoMfr. Part #CompanyDescriptionPackagePDFQtyPricing
(USD)
2N7000-GCompany:Microchip TechnologyRemark:MOSFET N-CH 60V 0.2A TO92-3Package:TO-92-3
DataSheet
In Stock:2006
Inquiry
Price:Inquiry




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